Substrate-induced half-metallic property in epitaxial silicene

For most practical applications in electronic devices, two-dimensional materials should be transferred onto semiconducting or insulating substrates, since they are usually generated on metallic substrates. However, the transfer often leads to wrinkles, damages, contaminations and so on which would destroy the intrinsic properties of samples. Thus, generating two-dimensional materials directly on nonmetallic substrates has been a desirable goal for a long time. Here, via a swarm structure search method and density functional theory, we employed an insulating N-terminated cubic boron nitride(111) surface as a substrate for the generation of silicene. The result shows that the silicene behaves as a ferromagnetic half-metal because of the strong interaction between silicon and surface nitrogen atoms. The magnetic moments are mainly located on surface nitrogen sites without bonding silicon atoms and the value is about 0.12 uB. In spin-up channel, it behaves as a direct band gap semiconductor with a gap of around 1.35 eV, while it exhibits metallic characteristic in spin-down channel, and the half-metallic band gap is about 0.11 eV. Besides, both the magnetic and electronic properties are not sensitive to the external compressive strain. This work maybe open a way for the utility of silicene in spintronic field

Graphene-like quaternary compound SiBCN: a new wide direct band gap semiconductor predicted by a first-principles study

Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substrates in modern industry, designing two-dimensional silicon-based semiconductors is highly desired. With the combination of a swarm structure search method and density functional theory in this work, a quaternary compound SiBCN with graphene-like structure is found and displays a wide direct band gap as expected. The band gap is of ~2.63 eV which is just between ~2.20 and ~3.39 eV of the highlighted semiconductors SiC and GaN. Notably, the further calculation reveals that SiBCN possesses high carrier mobility with ~5.14x10^3 and ~13.07x10^3 cm^2V^-1s^-1 for electron and hole, respectively. Furthermore, the ab initio molecular dynamics simulations also show that the graphene-like structure of SiBCN can be well kept even at an extremely high temperature of 2000 K. The present work tells that designing ulticomponent silicides may be a practicable way to search for new silicon-based low-dimensional semiconductors which can match well with the previous Si-based substrates

Atomically thin mononitrides SiN and GeN: new two-dimensional semiconducting materials

Low-dimensional Si-based semiconductors are unique materials that can both match well with the Si-based electronics and satisfy the demand of miniaturization in modern industry. Owing to the lack of such materials, many researchers put their efforts into this field. In this work, employing a swarm structure search method and density functional theory, we theoretically predict two-dimensional atomically thin mononitrides SiN and GeN, both of which present semiconducting nature. Furthermore study shows that SiN and GeN behave as indirect band gap semiconductors with the gap of 1.75 and 1.20 eV, respectively. The ab initio molecular dynamics calculation tells that both two mononitrides can exist stably even at extremely high temperature of 2000 K. Notably, electron mobilities are evaluated as 0.888x$10^3$ $cm^2V^{-1}s^{-1}$ and 0.413x$10^3$ $cm^2V^{-1}s^{-1}$ for SiN and GeN, respectively. The present work expands the family of low-dimensional Si-based semiconductors.Comment: arXiv admin note: text overlap with arXiv:1703.0389

Investigation of Metal Oxide/Carbon Nano Material as Anode for High Capacity Lithium-ion Cells

NASA is developing high specific energy and high specific capacity lithium-ion battery (LIB) technology for future NASA missions. Current state-of-art LIBs have issues in terms of safety and thermal stability, and are reaching limits in specific energy capability based on the electrochemical materials selected. For example, the graphite anode has a limited capability to store Li since the theoretical capacity of graphite is 372 mAh/g. To achieve higher specific capacity and energy density, and to improve safety for current LIBs, alternative advanced anode, cathode, and electrolyte materials are pursued under the NASA Advanced Space Power System Project. In this study, the nanostructed metal oxide, such as Fe2O3 on carbon nanotubes (CNT) composite as an LIB anode has been investigated

Effect of histone deacetylase inhibitor, trichostatin A, on cartilage regeneration from free perichondrial grafts in rabbits

Purpose: To evaluate the effect of histone deacetylase (HDAC) inhibitor, trichostatin A (TCA), on cartilage regeneration in a rabbit perichondrial graft model.Methods: Perichondrial grafts (20 × 20 mm2) were derived from the ears of New Zealand rabbits and transplanted onto the paravertebral muscle of the face of each rabbit. The rabbits were separated into three groups: non-treated control group, vehicle-treated control group that received 0.3 mL of saline, and TCA-treated group administered 0.3 mL of TCA (500 ng/mL). Rabbits in all three groups were further divided into subgroups according to the duration of treatment after transplantation: 2, 4, 6, and 8 weeks (n = 12 rabbits each). The effect of TCA on cartilage regeneration was determined histologically by evaluating the thickness of the cartilage plate in the grafted rabbits.Results: TCA increased the amount of immature cartilage 4 and 6 weeks after perichondrial graft implantation. Mature cartilage was seen in the TCA-treated rabbits 8 weeks after transplantation. The thickness of the cartilage plate was significantly (p < 0.01) higher in TCA group (905 ± 36) than in either the non-treated (632 ± 22) or the vehicle-treated control (639 ± 22) group.Conclusion: Treatment with trichostatin A, an HDAC inhibitor, enhances cartilage regeneration in rabbit recipients of a perichondrial graft. Furthermore, the findings of this study should be helpful in exploring the clinical use of trichostatin A.Keywords: Histone deacetylase inhibitor, Perichondrial graft, TrichostatinA, Cartilage regeneration, Transplantatio

Sequence Level Semantics Aggregation for Video Object Detection

Video objection detection (VID) has been a rising research direction in recent years. A central issue of VID is the appearance degradation of video frames caused by fast motion. This problem is essentially ill-posed for a single frame. Therefore, aggregating features from other frames becomes a natural choice. Existing methods rely heavily on optical flow or recurrent neural networks for feature aggregation. However, these methods emphasize more on the temporally nearby frames. In this work, we argue that aggregating features in the full-sequence level will lead to more discriminative and robust features for video object detection. To achieve this goal, we devise a novel Sequence Level Semantics Aggregation (SELSA) module. We further demonstrate the close relationship between the proposed method and the classic spectral clustering method, providing a novel view for understanding the VID problem. We test the proposed method on the ImageNet VID and the EPIC KITCHENS dataset and achieve new state-of-the-art results. Our method does not need complicated postprocessing methods such as Seq-NMS or Tubelet rescoring, which keeps the pipeline simple and clean.Comment: ICCV 2019 camera read